PMV65XP,215

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PMV65XP,215 datasheet

• Маркировка
  PMV65XP,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PMV65XP,215 Channel Mode: Enhancement Configuration: Single Continuous Drain Current: 3.9 A Current - Continuous Drain (id) @ 25?° C: 3.9A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: 20 V Drain-source On-res: 0.076Ohm Drain-source On-volt: 20V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 7.6nC @ 4.5V Gate-source Breakdown Voltage: +/- 12 V Gate-source Voltage (max): ?±12V ID_COMPONENTS: 1951740 Input Capacitance (ciss) @ Vds: 725pF @ 20V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Polarity: P Power - Max: 1.92W Power Dissipation: 1920 mW Rds On (max) @ Id, Vgs: 76 mOhm @ 2.8A, 4.5V Resistance Drain-source Rds (on): 0.076 Ohm @ 4.5 V Series: TrenchMOS?„? Transistor Polarity: P-Channel Type: Power MOSFET Vgs(th) (max) @ Id: 950mV @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 12 V Resistance Drain-Source RDS (on): 76 mOhms at 4.5 V Fall Time: 21 ns Rise Time: 21 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 68 ns Part # Aliases: PMV65XP T/R Other Names: 568-2358-2, 934058736215, PMV65XP T/R
• Количество страниц
  14 шт.
• Форматы файла
  HTML, PDF

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